unisonic technologies co., ltd MMBF170 preliminary power mosfet www.unisonic.com.tw 1 of 2 copyright ? 2011 unisonic technologies co., ltd qw-r502-629.a 0.5a, 60v n-channel enhancement mode field effect transistor ? description the utc MMBF170 is an n-channel enhancement mosfet using utc?s advanced technology to provide the customers with perfect r ds(on) , low input capacitance, low gate threshold voltage and high switching speed. ? features * r ds(on) <5m ? @ v gs =10v,i d =0.2a * high switching speed * low input capacitance(typical 22pf) ? symbol 2.gate 1.source 3.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing MMBF170l-ae2-r MMBF170g-ae2-r sot-23 s g d tape reel note: pin assignment: g: gate d: drain s: source
MMBF170 preliminary power mosfet unisonic technologies co., ltd 2 of 2 www.unisonic.com.tw qw-r502-629.a ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 60 v continuous 20 v gate-source voltage pulsed v gss 40 v drain-gate voltage r gs 1.0m ? v dgr 60 v continuous i d 500 ma drain current (note 2) pulsed i dm 800 ma power dissipation (note 2) 225 mw derating above t a =25c (note 2) p d 1.80 mw/c junction temperature t j 150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. valid provided that terminals are k ept at specified ambient temperature. ? thermal characteristics parameter symbol ratings unit junction to ambient ja 556 c/w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics (note 1) drain-source breakdown voltage bv dss i d =100a, v gs =0v 60 70 v drain-source leakage current i dss v ds =60v, v gs =0v 1.0 a forward v ds =0v, v gs =+15v +10 na gate- source leakage current reverse i gss v ds =0v, v gs =-15v -10 na on characteristics (note 1) gate threshold voltage v gs(th) v ds =v gs , i d =-250a 0.8 2.1 3.0 v v gs =10v, i d =200ma 5.0 static drain-source on-state resistance r ds(on) v gs =4.5v, i d =50ma 5.3 ? forward transconductance g fs v ds =10v, i d =0.2a 80 ms dynamic parameters input capacitance c iss 22 40 pf output capacitance c oss 11 30 pf reverse transfer capacitance c rss v gs =0v, v ds =10v, f=1.0mhz 2.0 5.0 pf switching parameters turn-on delay time t d(on) 10 ns turn-off delay time t d(off) v dd =25v, i d =0.5a, v gs =10v, r gen =50 ? 10 ns notes: 1. pulse width 300s, duty cycle 2%. utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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